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| Composite Transistors UP04601 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification 6 (0.30) 5 4 1.200.05 1.600.05 0.20+0.05 -0.02 Unit: mm 0.100.02 Absolute Maximum Ratings Ta = 25C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 60 50 7 100 200 -60 -50 -7 -100 -200 125 125 -55 to +125 Unit V V V mA mA V Tr1 Tr2 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 0 to 0.02 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Marking Symbol: 5C Internal Connection 6 5 4 V V mA mA mW C C 1 2 3 0.10 max. * 2SD0601A + 2SB0709A 5 0.550.05 Basic Part Number Display at No.1 lead (0.20) * Two elements incorporated into one package (Each transistor is separated) * Reduction of the mounting area and assembly cost by one half 1 2 3 (0.50)(0.50) 1.000.05 1.600.05 5 (0.20) Features Publication date: December 2003 SJJ00233BED 1 UP04601 Electrical Characteristics Ta = 25C 3C * Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = -2 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 180 0.1 150 3.5 Min 60 50 7 0.1 100 390 0.3 Typ Max Unit V V V A A V MHz pF * Tr2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 IE = -10 A, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IB = 0 VCE = -10 V, IC = -5 mA IC = -100 mA, IB = -10 mA VCB = -10 V, IE = 1 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz 180 - 0.3 80 2.7 Min -60 -50 -7 - 0.1 -100 390 - 0.5 Typ Max Unit V V V A A V MHz pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta 150 Total power dissipation PT (mW) 125 100 75 50 25 0 0 40 80 120 160 Ambient temperature Ta (C) 2 SJJ00233BED UP04601 Characteristics charts of Tr1 IC VCE 50 Ta = 25C IB = 160 A 140 A 160 VCE = 10 V Ta = 25C IC I B 10 VCE = 10 V Ta = 25C IB VBE Collector current IC (mA) 40 8 Collector current IC (mA) 30 100 A 80 A Base current IB (mA) 0.4 120 A 120 6 80 20 60 A 40 A 4 40 10 20 A 0 0 2 0 4 8 12 0 0.8 1.2 0 0 0.2 0.4 0.6 0.8 Collector-emitter voltage VCE (V) Base current IB (mA) Base-emitter voltage VBE (V) IC VBE VCE = 10 V 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 10 IC / IB = 10 400 hFE IC VCE = 10 V Ta = 75C 25C 240 -25C 160 120 Forward current transfer ratio hFE 100 320 Collector current IC (mA) 1 80 Ta = 75C -25C 60 10-1 25C Ta = 75C -25C 40 10-2 20 80 0 0 0.2 0.4 0.6 0.8 1.0 10-3 1 10 102 103 0 1 10 102 103 Base-emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25C 1 0 10 20 30 40 Collector-base voltage VCB (V) SJJ00233BED 3 UP04601 Characteristics charts of Tr2 IC VCE -120 Ta = 25C IC I B -160 VCE = -10 V Ta = 25C IB VBE -4 VCE = -10 V Ta = 25C -100 Collector current IC (mA) -80 -250 A -200 A -150 A -60 -80 Base current IB (mA) - 0.4 - 0.8 -1.2 IB = -300 A Collector current IC (mA) -120 -3 -2 -40 -100 A -50 A -40 -1 -20 0 0 -4 -8 -12 0 0 0 0 - 0.2 - 0.4 - 0.6 - 0.8 Collector-emitter voltage VCE (V) Base current IB (mA) Base-emitter voltage VBE (V) IC VBE VCE = -10 V 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -10 IC / IB = 10 600 hFE IC VCE = -10 V -120 -1 Ta = 75C 25C -1 Forward current transfer ratio hFE -100 500 Ta = 75C 400 25C 300 -25C Collector current IC (mA) -80 Ta = 75C -25C -60 -10 -25C -40 200 -10-2 -20 100 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 -10-3 -1 -10 -102 -103 0 -10-1 -1 -10 -102 -103 Base-emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25C 1 0 -10 -20 -30 -40 Collector-base voltage VCB (V) 4 SJJ00233BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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